HOLE EMISSION DEFECT STATES IN AMORPHOUS AS2SE3

被引：32

作者：

MELNYK, AR

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1980年 / 35-6卷 / JAN-期

关键词：

D O I：

10.1016/0022-3093(80)90304-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：837 / 842

页数：6

共 12 条

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[4] DARK DISCHARGE IN AMORPHOUS AS2SE3 FILMS [J].

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[5] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].

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[6]

MELNYK AR, 1976 P EL C

[7]

MELNYK AR, UNPUBLISHED

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MONTRIMAS E, 1972, CURRENT PROBLEMS ELE

[9]

MOTT NF, 1971, ELECTRONIC PROCESSES

[10]

ROBINETTE S, UNPUBLISHED

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