CALCULATIONS OF IMPURITY STATES IN SEMICONDUCTORS-II GAP-O

被引：26

作者：

JAROS, M ^{[1
]}

ROSS, SF ^{[1
]}

机构：

[1] UNIV NEWCASTLE,DEPT THEORETICAL PHYS,NEWCASTLE UPON TYNE,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1973年 / 6卷 / 23期

关键词：

D O I：

10.1088/0022-3719/6/23/018

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：3451 / 3456

页数：6

共 8 条

[1] ANIMALU AOE, 1965, 4 SOL STAT THEOR GRO
[2] [Anonymous], 1970, J LUMIN, DOI DOI 10.1016/0022-2313(70)90054-2
[3] TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS
FAULKNER, RA
[J]. PHYSICAL REVIEW, 1968, 175 (03): : 991 - &
[4] CALCULATIONS OF IMPURITY STATES IN SEMICONDUCTORS .1.
JAROS, M
ROSS, SF
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (10): : 1753 - 1762
[5] JONES D, UNPUBLISHED
[6] EFFECT OF PRESSURE ON ENERGY LEVELS OF IMPURITIES IN SEMICONDUCTORS .2. GOLD IN SILICON
NATHAN, MI
PAUL, W
[J]. PHYSICAL REVIEW, 1962, 128 (01): : 38 - &
[7] ROSS SF, IN PRESS
[8] LOW-TEMPERATURE HALL MEASUREMENTS ON X1C ELECTRONS IN GAAS
VYAS, MKR
PITT, GD
HOULT, RA
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (02): : 285 - 299