ANTIPHASE DOMAIN-STRUCTURES IN GAP AND GAAS EPITAXIAL LAYERS GROWN ON SI AND GE

被引：85

作者：

MORIZANE, K ^{[1
]}

机构：

[1] SONY CORP,RES CTR,HODOGAYA KU,YOKOHAMA,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1977年 / 38卷 / 02期

关键词：

D O I：

10.1016/0022-0248(77)90305-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：249 / 254

页数：6

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