STEP-FLOW GROWTH AND FRACTIONAL-LAYER SUPERLATTICES ON (111BAR)B GAAS VICINAL SURFACES

被引：5

作者：

FUKUI, T

SAITO, H

机构：

[1] NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corp., Musashino-shi, Tokyo, 180

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90462-E

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Step-flow growth and fractional-layer superlattices (FLSs) on (1BAR1BAR1BAR)B GaAs vicinal surfaces are investigated. Their periodic structures are measured by X-ray superlattice satellite diffraction. When conventional MOCVD is used, FLSs cannot be grown on the (1BAR1BAR1BAR)B vicinal surfaces. However, high intensity X-ray superlattice satellites are observed for FLSs grown by flow-rate modulation epitaxy (FME) in which group III and group V raw materials were alternately supplied. The crystal quality of FLSs is also strongly affected by the misorientation direction. The relationship between step flow growth and atomic arrangements near a step is discussed.

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页码：231 / 236

页数：6

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