DEPENDENCE OF ELECTRONIC GROUND-STATE OF NORMAL TYPE SILICON INVERSION LAYERS ON STRESS, TEMPERATURE, MAGNETIC-FIELD AND GATE VOLTAGE

被引：14

作者：

KELLY, MJ

FALICOV, LM

机构：

来源：

SURFACE SCIENCE | 1978年 / 73卷 / 01期

关键词：

D O I：

10.1016/0039-6028(78)90508-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：303 / 314

页数：12

共 38 条

[1] DENSITY-FUNCTIONAL CALCULATION OF SUB-BAND STRUCTURE IN ACCUMULATION AND INVERSION LAYERS [J].

ANDO, T .

PHYSICAL REVIEW B, 1976, 13 (08) :3468-3477

[2] FLUCTUATIONS, COULOMB EFFECTS, AND LONG-RANGE ORDER IN INCOMMENSURATE CHARGE-DENSITY-WAVE STRUCTURES [J].

BERGMAN, DJ ;

RICE, TM ;

LEE, PA .

PHYSICAL REVIEW B, 1977, 15 (04) :1706-1718

[3] POSSIBILITY OF A SPIN-DENSITY-WAVE OR A VALLEY DENSITY-WAVE IN GROUND-STATE OF A 2-DIMENSIONAL ELECTRON FLUID [J].

BERGMAN, DJ ;

RICE, TM .

SOLID STATE COMMUNICATIONS, 1977, 23 (01) :59-62

[4] ELECTRON-HOLE LIQUIDS IN SEMICONDUCTORS [J].

BRINKMAN, WF ;

RICE, TM .

PHYSICAL REVIEW B, 1973, 7 (04) :1508-1523

[5] SUPERCONDUCTIVITY IN MANY-VALLEY SEMICONDUCTORS + IN SEMIMETALS [J].

COHEN, ML .

PHYSICAL REVIEW, 1964, 134 (2A) :A511-+

[6] VALLEY DEGENERACY AND MOBILITY ANISOTROPY UNDER MECHANICAL-STRESS ON (111) SILICON INVERSION LAYERS [J].

DORDA, G ;

GESCH, H ;

EISELE, I .

SOLID STATE COMMUNICATIONS, 1976, 20 (04) :429-432

[7]

DORDA G, UNPUBLISHED

[8] EVIDENCE FOR MOBILITY DOMAINS IN (100) SILICON INVERSION LAYERS [J].

EISELE, I ;

GESCH, H ;

DORDA, G .

SOLID STATE COMMUNICATIONS, 1976, 20 (07) :677-680

[9] EFFECTIVE MASSES IN (100) SILICON INVERSION LAYERS [J].

EISELE, I ;

GESCH, H ;

DORDA, G .

SOLID STATE COMMUNICATIONS, 1977, 22 (03) :185-188

[10]

ENGLERT T, UNPUBLISHED

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