DEPENDENCE OF ELECTRONIC GROUND-STATE OF NORMAL TYPE SILICON INVERSION LAYERS ON STRESS, TEMPERATURE, MAGNETIC-FIELD AND GATE VOLTAGE

被引：14

作者：

KELLY, MJ

FALICOV, LM

机构：

来源：

SURFACE SCIENCE | 1978年 / 73卷 / 01期

关键词：

D O I：

10.1016/0039-6028(78)90508-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：303 / 314

页数：12

共 38 条

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FALICOV, LM .

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[15] OPTICAL-PROPERTIES OF CHARGE-DENSITY-WAVE GROUND-STATES FOR INVERSION LAYERS IN MANY-VALLEY SEMICONDUCTORS [J].

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FALICOV, LM .

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[17] MAGNETIC-FIELDS AND STABILITY OF CHARGE-DENSITY-WAVE GROUND-STATES IN SILICON INVERSION LAYERS [J].

KELLY, MJ ;

FALICOV, LM .

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[18] APPLIED STRESSES, CYCLOTRON MASSES AND CHARGE-DENSITY-WAVES IN SILICON INVERSION LAYERS [J].

KELLY, MJ ;

FALICOV, LM .

SOLID STATE COMMUNICATIONS, 1977, 22 (07) :447-450

[19] STRESS AND TEMPERATURE-DEPENDENCE OF ELECTRONIC PROPERTIES OF N-TYPE SILICON INVERSION LAYERS [J].

KELLY, MJ ;

FALICOV, LM .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (23) :4735-4752

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