学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
STABILITY OG GUNN DOMAINS
被引:9
作者
:
BUTCHER, PN
论文数:
0
引用数:
0
h-index:
0
机构:
University of Warwick, Coventry
BUTCHER, PN
ROWLANDS, G
论文数:
0
引用数:
0
h-index:
0
机构:
University of Warwick, Coventry
ROWLANDS, G
机构
:
[1]
University of Warwick, Coventry
来源
:
PHYSICS LETTERS A
|
1968年
/ A 26卷
/ 06期
关键词
:
D O I
:
10.1016/0375-9601(68)90615-4
中图分类号
:
O4 [物理学];
学科分类号
:
0702 ;
摘要
:
It is shown that a Gunn domain formed by applying a constant voltage to a semiconductor sample through a load resistance is stable for all values of the resistance. © 1968.
引用
收藏
页码:226 / +
页数:1
相关论文
共 4 条
[1]
GUNN EFFECT
[J].
BUTCHER, PM
论文数:
0
引用数:
0
h-index:
0
BUTCHER, PM
.
REPORTS ON PROGRESS IN PHYSICS,
1967,
30
:97
-+
[2]
STABLE SPACE-CHARGE LAYERS IN 2-VALLEY SEMICONDUCTORS
[J].
COPELAND, JA
论文数:
0
引用数:
0
h-index:
0
COPELAND, JA
.
JOURNAL OF APPLIED PHYSICS,
1966,
37
(09)
:3602
-+
[3]
HEEKS JS, 1966, T I ELECT ELECTRON E, V13, P68
[4]
THEORY OF GUNN EFFECT
[J].
KNIGHT, BW
论文数:
0
引用数:
0
h-index:
0
KNIGHT, BW
;
PETERSON, GA
论文数:
0
引用数:
0
h-index:
0
PETERSON, GA
.
PHYSICAL REVIEW,
1967,
155
(02)
:393
-+
←
1
→
共 4 条
[1]
GUNN EFFECT
[J].
BUTCHER, PM
论文数:
0
引用数:
0
h-index:
0
BUTCHER, PM
.
REPORTS ON PROGRESS IN PHYSICS,
1967,
30
:97
-+
[2]
STABLE SPACE-CHARGE LAYERS IN 2-VALLEY SEMICONDUCTORS
[J].
COPELAND, JA
论文数:
0
引用数:
0
h-index:
0
COPELAND, JA
.
JOURNAL OF APPLIED PHYSICS,
1966,
37
(09)
:3602
-+
[3]
HEEKS JS, 1966, T I ELECT ELECTRON E, V13, P68
[4]
THEORY OF GUNN EFFECT
[J].
KNIGHT, BW
论文数:
0
引用数:
0
h-index:
0
KNIGHT, BW
;
PETERSON, GA
论文数:
0
引用数:
0
h-index:
0
PETERSON, GA
.
PHYSICAL REVIEW,
1967,
155
(02)
:393
-+
←
1
→