STABILITY OG GUNN DOMAINS

被引:9
作者
BUTCHER, PN
ROWLANDS, G
机构
[1] University of Warwick, Coventry
关键词
D O I
10.1016/0375-9601(68)90615-4
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
It is shown that a Gunn domain formed by applying a constant voltage to a semiconductor sample through a load resistance is stable for all values of the resistance. © 1968.
引用
收藏
页码:226 / +
页数:1
相关论文
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[2]   STABLE SPACE-CHARGE LAYERS IN 2-VALLEY SEMICONDUCTORS [J].
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JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) :3602-+
[3]  
HEEKS JS, 1966, T I ELECT ELECTRON E, V13, P68
[4]   THEORY OF GUNN EFFECT [J].
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PETERSON, GA .
PHYSICAL REVIEW, 1967, 155 (02) :393-+