PHOTOSENSITIVE IMPURITY-ASSISTED TUNNELING (AU, 77 DEGREES K) IN GAAS TUNNEL DIODES

被引：16

作者：

HOLONYAK, N

KEUNE, DL

BURNHAM, RD

DUKE, CB

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.24.589

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：589 / &

共 15 条

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