ELECTROREFLECTANCE OBSERVATION OF INTERNAL PHOTOEMISSION IN INSB

Electroreflectance is being used to determine the character of InSb surface layers exposed to uv irradiation. On n-type surfaces, such irradiation induces a charge transfer from band states into trapping states in the oxide layer, and the surface converts to p-type. Relevant parameters of this charge transfer such as threshold energy and rate of thermal recovery are determined for different surface conditions and temperatures. The convenience of electroreflectance as a continuous monitor of surface processes in InSb is pointed out. © 1969, Walter de Gruyter. All rights reserved.