CHARGED WALLS IN THIN MAGNETIC-FILMS

被引:33
作者
HUBERT, A
机构
[1] Institut für Werkstoffwissenschaften der Universität Erlangen, D 852 Erlangen, Fed Rep. Germany
关键词
D O I
10.1109/TMAG.1979.1060325
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Charged walls are domain walls which carry a net “magnetic charge” (div M) due to their orientation relative to the domain magnetizations. They differ from ordinary Bloch and Néel walls (which are uncharged) primarily in their much wider profile. In order to calculate such walls, a variational method was developed. It is based on the separation of that part of stray field energy which would be present even with an infinitely thin wall. The main results of the calculations are as follows. 1) Isolated charged walls do exist if exchange energy is taken into account, as opposed to the periodic solution known for the limit of negligible exchange energy. 2) Rotated, partially charged walls develop a Néel-wall-like narrow core region., Detailed results for the wall profiles, energies and widths as a function of wall angle, orientation, film thickness, and material parameters are presented. They are applied to two examples: the case of a Permalloy film in a domain tip propagation memory, and the case of the implanted layer on a contiguous disk bubble device. Copyright © 1979 by The lnstitutc of Electrical and Electronics Engineers, Inc.
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页码:1251 / 1260
页数:10
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