FERROELECTRIC LIQUID-CRYSTAL ALIGNMENT BY OBLIQUE EVAPORATION OF SIO2

被引：3

作者：

ARMITAGE, D

机构：

[1] Research and Development Division, Lockheed Missiles & Space Company Inc., Palo Alto, CA94304, 3251, Hanover St.

来源：

FERROELECTRICS | 1991年 / 122卷 / 1-4期

关键词：

D O I：

10.1080/00150199108226045

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A study of the alignment of a ferroelectric liquid crystal (FLC) on various obliquely deposited silicon oxide substrates is presented. The FLC is further aligned by an electric field >10 V/μm at 10 hz. Improved bistability and full cone-angle switching are achieved for 10 nm small angle depositions set at a glancing angle of 5° to the substrate. Thicker depositions 30 nm inhibit full cone-angle switching. Flow effects consistent with piezoelectric flow are observed at high electric fields and khz frequencies. © 1991, Taylor & Francis Group, LLC. All rights reserved.

引用

页码：239 / 252

页数：14

共 25 条

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