TRANSITION OF HEAVILY DOPED FERROMAGNETIC SEMICONDUCTORS TO INSULATING STATE

被引：15

作者：

NAGAEV, EL

GRIGIN, AP

机构：

来源：

关键词：

D O I：

10.1016/0375-9601(72)90772-4

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：469 / &

共 8 条

[1] Krivoglaz M. A., 1969, Fizika Tverdogo Tela, V11, P3119
[2] MOLNAR SV, 1967, J APPL PHYS, V38, P959
[3] Nagaev E. L., 1969, Fizika Tverdogo Tela, V11, P3438
[4] Nagaev E. L., 1969, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V56, P1013
[5] Nagaev E. L., 1969, Fizika Tverdogo Tela, V11, P2779
[6] NAGAEV EL, 1967, ZH EKSPER TEOR FIZ P, V6, P485
[7] PRESSURE DEPENDENCE OF ELECTRICAL RESISTIVITY OF EUO
OLIVER, MR
KAFALAS, JA
DIMMOCK, JO
REED, TB
[J]. PHYSICAL REVIEW LETTERS, 1970, 24 (19) : 1064 - &
[8] INFLUENCE OF FERROMAGNETICALLY ORDERED ION SPINS ON A CONDUCTION ELECTRON
RYS, F
HELMAN, JS
BALTENSPERGER, W
[J]. PHYSIK DER KONDENSITERTEN MATERIE, 1967, 6 (02): : 105 - +