DEPENDENCE OF MINORITY-CARRIER BULK GENERATION IN SILICON MOS STRUCTURES ON HCL CONCENTRATION IN AN OXIDIZING AMBIENT

被引：7

作者：

ESQUEDA, PD

DAS, MB

机构：

[1] PENN STATE UNIV, DEPT ELECT ENGN, SOLID STATE DEVICE LAB, UNIVERSITY PK, PA 16802 USA

[2] PENN STATE UNIV, MAT RES LAB, UNIVERSITY PK, PA 16802 USA

来源：

关键词：

D O I：

10.1016/0038-1101(80)90131-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：741 / 746

页数：6

共 19 条

[1]

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[2]

Burgess R.R., 1973, SEMICONDUCTOR SILICO, P363

[3]

Calzolari P. U., 1972, Alta Frequenza, V41, P848

[4]

COLLINS TW, 1978, IEEE T ELECTRON DEV, V90, P101

[5]

DAS MB, 1971, SOLID ST ELECTRON, V20, P307

[6]

ESQUEDA PD, UNPUBLISHED

GARLICK, GFJ ;

GIBSON, AF .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1948, 60 (342) :574-590

[8]

GRUBBS WH, 1976, 150TH M EL SOC LAS V

HEIMAN, FP .

[10]

KRIEGLER RJ, 1973, DENKI KAGAKU, V41