ENHANCEMENT OF THE REACTIVE DEPOSITION RATE OF TIN FILMS AT LOW NITROGEN-CONTENT

被引：9

作者：

BARANKOVA, H ^{[1
]}

BARDOS, L ^{[1
]}

BERG, S ^{[1
]}

机构：

[1] UNIV UPPSALA,INST TECHNOL,DEPT ELECTR,S-75121 UPPSALA,SWEDEN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 01期

关键词：

D O I：

10.1149/1.2054721

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

TiN films were reactively deposited from a Ti nozzle by an RF plasma jet. At power >100 W the optical emission from Ti measured in the plasma jet channel is significantly higher for 0.4% content of nitrogen in the argon than for pure argon. Extreme enhancement of the TiN deposition rate at 0.4% content of nitrogen with respect to Ti film growth rate was observed. At 180 W the film growth rate of TiN of 1850 nm/min was achieved, which is 30 times higher than the deposition rate of Ti at similar deposition conditions.

引用

页码：L8 / L9

页数：2

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