STRUCTURAL STUDIES OF III-V AND GROUP-IV SEMICONDUCTORS AT HIGH-PRESSURE

被引：48

作者：

NELMES, RJ

MCMAHON, MI

WRIGHT, NG

ALLAN, DR

LIU, H

LOVEDAY, JS

机构：

[1] Department of Physics and Astronomy, The University of Edinburgh, Edinburgh, EH9 3JZ, Mayfield Road

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1995年 / 56卷 / 3-4期

关键词：

SEMICONDUCTORS; HIGH PRESSURE; X-RAY DIFFRACTION; PHASE TRANSITIONS;

D O I：

10.1016/0022-3697(94)00236-3

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Extensive new structural results on II-VI, III-V and group IV semiconductors under pressure have been obtained over the past two years at SRS Daresbury, using angle-dispersive techniques and an image-plate detector. In this paper, a brief overview is presented of recent work on Si, Ge, GaSb, InSb, InAs, InP and GaAs.

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页码：539 / 543

页数：5

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