DEVICE PERFORMANCE OF SUBMICROMETER MESFETS WITH LTG PASSIVATION

被引：6

作者：

YIN, LW ^{[1
]}

NGUYEN, NX ^{[1
]}

KIZILOGLU, K ^{[1
]}

IBBETSON, JP ^{[1
]}

GOSSARD, AC ^{[1
]}

MISHRA, UK ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 17期

关键词：

MESFETS; PASSIVATION;

D O I：

10.1049/el:19931033

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The device characteristics of a submicrometre GaAs MESFET with low-temperature-grown GaAs passivation are reported. The fabricated device has a high gate-drain breakdown voltage of over 20V with a maxium drain current of 340 mA/mm and a transconductance of 200 mS/mm. Microwave measurement of the device yields a cutoff frequency of 32 GHz, and an unusually high maximum frequency or oscillation of 110 GHz. These combined characteristics demonstrate the potential of the device as a viable power amplifier in the millimetre-wave frequency range.

引用

页码：1550 / 1551

页数：2

共 4 条

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[2]

NGUYEN LD, 1989, THESIS CORNELL U

[3] IMPROVED BREAKDOWN VOLTAGE IN GAAS-MESFETS UTILIZING SURFACE-LAYERS OF GAAS GROWN AT A LOW-TEMPERATURE BY MBE [J].

YIN, LW ;

HWANG, Y ;

LEE, JH ;

KOLBAS, RM ;

TREW, RJ ;

MISHRA, UK .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (12) :561-563

[4]

YIN LW, 1993, 1993 SPR MRS M SAN F

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