ELECTRICAL CHARACTERIZATION OF INSITU AL-GASB SCHOTTKY DIODES GROWN BY MOLECULAR-BEAM EPITAXY

被引：10

作者：

POOLE, I

LEE, ME

SINGER, KE

机构：

[1] Dept. of Electron. and Electr. Eng., Univ. of Manchester, Inst. of Sci. and Technol.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 09期

关键词：

18;

D O I：

10.1088/0268-1242/6/9/008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical behaviour of epitaxial Al: GaSb Schottky diodes is modelled to highlight the importance of the effects of two-band electron conduction and recombination in the depletion region when deriving barrier heights from non-ideal I-V characteristics. The analysis reveals a Schottky barrier height to electrons in the GAMMA-conduction band minimum in the range 0.56 to 0.57 eV for n-type GaSb.

引用

页码：881 / 885

页数：5

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