INTERFACE FORMATION WITH IONS AND NEUTRAL ATOMS

This paper focuses on the morphologies and band bending of In/GaAs(110), Bi/GaAs(110), and Ag/InP(110) interfaces prepared by the deposition of ions and neutral atoms. The results show that ions accelerated to 200 eV disrupt the substrate (In/GaAs and Bi/GaAs) or enhance disruption (Ag/InP) and that three-dimensional growth occurs for both types of interfaces. Measurements of the movement of the Fermi level in the gap during overlayer growth indicate slow approach to the same final position for ions and neutrals, almost independent of the amount of surface disruption. These results demonstrate that defects created during substrate disruption do not directly control band bending. © 1990 The American Physical Society.