DIODE MULTIPLIERS FOR SUBMILLIMETER-WAVE INALAS/INGAAS HETEROSTRUCTURE MONOLITHIC INTEGRATED-CIRCUITS

被引：1

作者：

KWON, Y

PAVLIDIS, D

机构：

[1] Center for Space Terahertz Technology and, Center for High Frequency Microelectronics, Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1991年 / 4卷 / 01期

关键词：

DIODE MULTIPLIER; SUBMILLIMETER-WAVE MONOLITHIC INTEGRATED CIRCUIT; INALAS/INGAAS HETEROSTRUCTURE; HEMT DIODE;

D O I：

10.1002/mop.4650040112

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAlAs/InGaAs heterostructures are studied as multiplier elements for submillimeter-wave monolithic integrated circuits. The designs considered for this purpose are based on the principle of conventional HEMT, HEMT with n+ bottom layer and a new proposed scheme of quantum-confined modulated charge (QCMC). The QCMC diode is analyzed theoretically and experimentally showing its potential operation capability at 1.5 THz.

引用

页码：38 / 43

页数：6

共 11 条

[1]

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[2]

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[3]

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[4]

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[5]

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[7]

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[8]

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[9]

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[10]

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