THERMAL-EXPANSION BEHAVIOR OF SILICON AT LOW-TEMPERATURES

被引:55
作者
SHAH, JS
STRAUMANIS, ME
机构
关键词
D O I
10.1016/0038-1098(72)90371-7
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:159 / +
页数:1
相关论文
共 9 条
[1]  
BARRON THK, 1955, PHILOS MAG, V46, P720
[2]   GRUNEISEN PARAMETERS FOR THE EQUATION OF STATE OF SOLIDS [J].
BARRON, THK .
ANNALS OF PHYSICS, 1957, 1 (01) :77-90
[3]   LATTICE CONSTANTS + THERMAL EXPANSIVITIES OF SILICON + OF CALCIUM FLUORIDE BETWEEN 6 DEGREES + 322 DEGREES K [J].
BATCHELDER, DN ;
SIMMONS, RO .
JOURNAL OF CHEMICAL PHYSICS, 1964, 41 (08) :2324-&
[4]   THERMAL EXPANSION OF GERMANIUM AND SILICON AT LOW TEMPERATURES [J].
CARR, RH ;
MCCAMMON, RD ;
WHITE, GK .
PHILOSOPHICAL MAGAZINE, 1965, 12 (115) :157-+
[5]   THE HEAT CAPACITY OF PURE SILICON AND GERMANIUM AND PROPERTIES OF THEIR VIBRATIONAL FREQUENCY SPECTRA [J].
FLUBACHER, P ;
LEADBETTER, AJ ;
MORRISON, JA .
PHILOSOPHICAL MAGAZINE, 1959, 4 (39) :273-292
[6]   THERMAL EXPANSION OF SOME CRYSTALS WITH THE DIAMOND STRUCTURE [J].
GIBBONS, DF .
PHYSICAL REVIEW, 1958, 112 (01) :136-140
[8]   THERMAL EXPANSION OF TUNGSTEN AT LOW TEMPERATURES [J].
SHAH, JS ;
STRAUMANIS, ME .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) :3288-+
[9]   PRECISION DETERMINATION OF LATTICE PARAMETERS AT LOW TEMPERATURES WITHOUT USE OF LIQUID GASES [J].
WOODARD, CL ;
STRAUMAN.ME .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1971, 4 (JUN1) :201-&