THE CORRELATION BETWEEN SELECTIVE OXIDE ETCHING AND THERMODYNAMIC PREDICTION

被引:8
作者
MCNEVIN, SC
机构
[1] McNevin, S.C.
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1995年 / 13卷 / 03期
关键词
9;
D O I
10.1116/1.579830
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:797 / 800
页数:4
相关论文
共 9 条
[1]   ANALYSIS OF FLUOROCARBON FILM DEPOSITED BY HIGHLY SELECTIVE OXIDE ETCHING [J].
AKIMOTO, T ;
FURUOYA, S ;
HARASIMA, K ;
IKAWA, E .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (4B) :2151-2156
[2]   The vapor pressure of metallic tungsten [J].
Langmuir, I .
PHYSICAL REVIEW, 1913, 2 (05) :329-342
[3]  
MARKS J, 1992, P SPIE, V1803
[4]   THERMODYNAMIC STABILITY AND INCORPORATION OF PHOSPHORUS INTO GERMANIUM-DOPED SILICA GLASS [J].
MCAFEE, KB ;
GAY, DM ;
WALKER, KL ;
HOZACK, RS .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1985, 68 (06) :359-362
[5]   CHEMICAL ETCHING OF GAAS AND INP BY CHLORINE - THE THERMODYNAMICALLY PREDICTED DEPENDENCE ON CL2 PRESSURE AND TEMPERATURE [J].
MCNEVIN, SC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (05) :1216-1226
[6]   A THERMOCHEMICAL MODEL FOR THE PLASMA-ETCHING OF ALUMINUM IN BCL3/CL2 AND BBR3/BR2 [J].
MCNEVIN, SC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06) :1212-1222
[7]   FLUOROCARBON HIGH-DENSITY PLASMAS .2. SILICON DIOXIDE AND SILICON ETCHING USING CF4 AND CHF3 [J].
OEHRLEIN, GS ;
ZHANG, Y ;
VENDER, D ;
JOUBERT, O .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (02) :333-344
[8]  
STALL DR, 1971, NSRDSNBS37
[9]  
STULL DR, 1982, JANAF THERMOCHEMICAL, V55