LARGE-CAPACITY SEMICONDUCTOR MEMORY

被引:14
作者
HODGES, DA
机构
[1] Bell Telephone Laboratories, Inc., Murray Hill, N. J.
来源
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 07期
关键词
D O I
10.1109/PROC.1968.6512
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
[No abstract available]
引用
收藏
页码:1148 / +
页数:1
相关论文
共 53 条
[1]  
ALLISON JF, 1967, INT SOLIDSTATE CIRCU, V10, P76
[2]  
BEELITZ HR, 1967, AFIPS P, V31, P185
[3]  
BIDWELL AW, 1967, INT SOLIDSTATE CIRCU, V10, P78
[4]   DESIGN OF MONOLITHIC CIRCUIT CHIPS [J].
BILOUS, O ;
FEINBERG, I ;
LANGDON, JL .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1966, 10 (05) :370-&
[5]  
BREWER DE, 1967, AFIPS P, V31, P381
[6]  
BURNS JR, 1966, INT SOLID STATE CIRC, V9, P118
[7]  
CANNING M, 1967, ELECTRONICS-US, V40, P143
[8]  
CATT I, 1966, AFIPS C P, V29, P315
[9]   SOLID LOGIC TECHNOLOGY - VERSATILE HIGH-PERFORMANCE MICROELECTRONICS [J].
DAVIS, EM ;
HARDING, WE ;
SCHWARTZ, RS ;
CORNING, JJ .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) :102-&
[10]  
DUNN RS, 1967, AFIPS P, V31, P596