MODIFIED EBERS-MOLL TRANSISTOR MODEL FOR RF-INTERFERENCE ANALYSIS

被引：37

作者：

LARSON, CE

ROE, JM

机构：

[1] McDonnell Douglas Astronautics Company, St. Louis

来源：

IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY | 1979年 / 21卷 / 04期

关键词：

bipolar; large signal; modified Ebers-Moll; nonlinear effects; Transistor model;

D O I：

10.1109/TEMC.1979.303768

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper develops analytical techniques for the study of nonlinear RF and microwave effects in semiconductor devices. Rectification in p-n junctions is discussed, and a novel large-signal transistor model is developed, based upon modifications to standard Ebers-Moll formulations for bipolar transistors. Use of the models in worst-case analysis is discussed, with ranges of parameters given based on a simplified analysis of rectification in ideal diodes. Copyright © 1979 by the Institute of Electrical and Electronics Engineers, Inc.

引用

页码：283 / 290

页数：8

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[2]

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[3] MICROWAVE INTERFERENCE EFFECT IN BIPOLAR-TRANSISTORS [J].

RICHARDSON, RE ;

PUGLIELLI, VG ;

AMADORI, RA .

IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY, 1975, 17 (04) :216-219

[4]

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IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY, 1979, 21 (04) :297-306

[6]

WHALEN JJ, 1978 P IEEE INT S EL, P64

[7]

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[8]

1977, ADA043777

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