TEMPERATURE-MODULATED REFLECTANCE OF GASE AT GROUND STATE EXCITON LINE

[1] ANALYSIS OF CRITICAL POINTS OF GRAPHITE FROM TEMPERATURE-MODULATED REFLECTANCE [J]. PHYSICAL REVIEW LETTERS, 1968, 20 (01) : 9 - +

[2] THERMOREFLECTANCE SPECTRUM OF SILICON [J]. SOLID STATE COMMUNICATIONS, 1968, 6 (11) : 815 - +

[3] BALZAROTTI A, UNPUBLISHED RESULTS

[4] BASINSKI ZS, 1961, HELV PHYS ACTA, V34, P373

[5] BASSANI F, 1964, P INT C PHYS SEMICON

[6] REFLECTANCE MODULATION AT A GERMANIUM SURFACE [J]. SOLID STATE COMMUNICATIONS, 1966, 4 (05) : 241 - &

[7] OPTICAL ABSORPTION EDGE IN LAYER STRUCTURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (12) : 1427 - &

[8] BREBNER JL, 1965, HELV PHYS ACTA, V38, P650

[9] BREBNER JL, 1962, P INT C PHYS SEMICON

[10] SEMICONDUCTORS OF THE TYPE A-III B-VI [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 434 - 437

[1] ANALYSIS OF CRITICAL POINTS OF GRAPHITE FROM TEMPERATURE-MODULATED REFLECTANCE [J]. PHYSICAL REVIEW LETTERS, 1968, 20 (01) : 9 - +

[2] THERMOREFLECTANCE SPECTRUM OF SILICON [J]. SOLID STATE COMMUNICATIONS, 1968, 6 (11) : 815 - +

[3] BALZAROTTI A, UNPUBLISHED RESULTS

[4] BASINSKI ZS, 1961, HELV PHYS ACTA, V34, P373

[5] BASSANI F, 1964, P INT C PHYS SEMICON

[6] REFLECTANCE MODULATION AT A GERMANIUM SURFACE [J]. SOLID STATE COMMUNICATIONS, 1966, 4 (05) : 241 - &

[7] OPTICAL ABSORPTION EDGE IN LAYER STRUCTURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (12) : 1427 - &

[8] BREBNER JL, 1965, HELV PHYS ACTA, V38, P650

[9] BREBNER JL, 1962, P INT C PHYS SEMICON

[10] SEMICONDUCTORS OF THE TYPE A-III B-VI [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 434 - 437