CALCULATION OF LATERAL CURRENT SPREADING AND SERIES RESISTANCE EFFECTS IN OXIDE STRIPE GEOMETRY GAAS-GAALAS DH LASERS

被引：12

作者：

LENGYEL, G

PATZAK, E

ZSCHAUER, KH

机构：

[1] HEINRICH HERTZ INST NACHRICHTENTECHN BERLIN GMBH,D-1000 BERLIN 10,FED REP GER

[2] SIEMENS AG,RES LABS,D-8000 MUNCHEN 83,FED REP GER

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 04期

关键词：

D O I：

10.1049/el:19810123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：174 / 175

页数：2

共 14 条

[1]

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[2]

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[5] CARRIER AND GAIN SPATIAL PROFILES IN GAAS STRIPE GEOMETRY LASERS [J].

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[6] GAAS DOUBLE HETEROSTRUCTURE LASING BEHAVIOR ALONG JUNCTION PLANE [J].

HAKKI, BW .

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[7] CURRENT-CROWDED CARRIER CONFINEMENT IN DOUBLE-HETEROSTRUCTURE LASERS [J].

JOYCE, WB .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2394-2401

[8] STEADY-STATE JUNCTION-CURRENT DISTRIBUTIONS IN THIN RESISTIVE FILMS ON SEMICONDUCTOR JUNCTIONS (SOLUTIONS OF DEL 2V = +/- EV) [J].

JOYCE, WB ;

WEMPLE, SH .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3818-&

[9]

KIRBY PA, 1977, IEEE J QUANTUM ELECT, V13, P705

[10] INFLUENCE OF STRIPE WIDTH ON THRESHOLD CURRENT OF DOUBLE-HETEROJUNCTION LASERS [J].

LADANY, I .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) :1935-1940

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