Measurement of Current Carrier Lifetime in GaSe

被引：8

作者：

Tagiev, B. G. ^{[1
]}

Rzaev, M. A. ^{[1
]}

Guseinova, E. S. ^{[1
]}

Gadzhiev, V. A. ^{[1
]}

Kuchin, A. A. ^{[1
]}

机构：

[1] Acad Sci Azerbaidzhan SSR, Inst Phys, Baku, Azerbaijan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1970年 / 3卷 / 02期

关键词：

D O I：

10.1002/pssa.19700030238

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K119 / K122

页数：4

共 5 条

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ABDULLAE.GB
GUSEINOV.ES
TAGIEV, BG
[J]. PHYSICA STATUS SOLIDI, 1966, 16 (01): : 205 - &
[2] INVESTIGATION OF PHOTOCONDUCTIVE RELAXATION IN P-GASE SINGLE CRYSTALS
ABDULLAEV, GB
MEKHTIEV, RF
MAMEDOVA, AZ
GUSEINOVA, ES
[J]. PHYSICA STATUS SOLIDI, 1966, 14 (02): : K127 - +
[3] BOGDANOV SV, 1956, PRIB TEKH EKSP, V1, P66
[4] MOBILITY OF CHARGE CARRIERS IN SEMICONDUCTING LAYER STRUCTURES
FIVAZ, R
MOOSER, E
[J]. PHYSICAL REVIEW, 1967, 163 (03): : 743 - &
[5] Ryvkin S.M., 1963, PHOTOELECTRIC PHENOM