A SIMPLE METHOD TO EXTRACT THE ASYMMETRY IN PARASITIC SOURCE AND DRAIN RESISTANCES FROM MEASUREMENTS ON A MOS-TRANSISTOR

被引：26

作者：

RAYCHAUDHURI, A ^{[1
]}

KOLK, J ^{[1
]}

DEEN, MJ ^{[1
]}

KING, MIH ^{[1
]}

机构：

[1] NO TELECOM CANADA LTD,NEPEAN,ON K2H 8V4,CANADA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 07期

关键词：

D O I：

10.1109/16.391229

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For reasons related to layout, processing, or hot-carrier stressing, a MOSFET mag have unequal source and drain parasitic resistances. In such cases, it is important to accurately extract the asymmetry in these resistances, without depending on individual judgments. In this brief, we present a simple method to extract this asymmetry. This method is based on an accurate formulation and measurement of the sc conductances with respect to the gate terminal of an MOS transistor in saturation.

引用

页码：1388 / 1390

页数：3

共 6 条

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[6]

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