CADMIUM TELLURIDE SURFACE BARRIER DETECTORS

[1] CDTE AS A GAMMA DETECTOR [J]. NUCLEAR INSTRUMENTS & METHODS, 1967, 55 (02): : 383 - +

[2] ARKADEVA EN, 1967, SOV PHYS SEMICOND+, V1, P669

[3] BROWN WL, 1966, SEMICONDUCTOR MATERI

[4] CONDUCTION PROPERTIES OF THE AU-NORMAL-TYPE-SI SCHOTTKY BARRIER [J]. SOLID-STATE ELECTRONICS, 1963, 6 (03) : 281 - 295

[5] KASHERININOV PG, 1966, SOVIET PHYS SEMICOND, V4, P451

[6] GENERATION-RECOMBINATION MECHANISM IN CADMIUM TELLURIDE P-N JUNCTIONS [J]. JOURNAL DE PHYSIQUE, 1969, 30 (01): : 97 - &

[7] HIGH-PURITY CDTE BY SEALED-INGOT ZONE REFINING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (04) : 343 - 344

[8] LORENZ MR, 1964, PHYS REV, V134, P751

[9] EVALUTATION OF CDTE BY NUCLEAR PARTICLE MEASUREMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) : 296 - +

[10] MAYER JW, 1968, SEMICONDUCTOR DETECT

[1] CDTE AS A GAMMA DETECTOR [J]. NUCLEAR INSTRUMENTS & METHODS, 1967, 55 (02): : 383 - +

[2] ARKADEVA EN, 1967, SOV PHYS SEMICOND+, V1, P669

[3] BROWN WL, 1966, SEMICONDUCTOR MATERI

[4] CONDUCTION PROPERTIES OF THE AU-NORMAL-TYPE-SI SCHOTTKY BARRIER [J]. SOLID-STATE ELECTRONICS, 1963, 6 (03) : 281 - 295

[5] KASHERININOV PG, 1966, SOVIET PHYS SEMICOND, V4, P451

[6] GENERATION-RECOMBINATION MECHANISM IN CADMIUM TELLURIDE P-N JUNCTIONS [J]. JOURNAL DE PHYSIQUE, 1969, 30 (01): : 97 - &

[7] HIGH-PURITY CDTE BY SEALED-INGOT ZONE REFINING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (04) : 343 - 344

[8] LORENZ MR, 1964, PHYS REV, V134, P751

[9] EVALUTATION OF CDTE BY NUCLEAR PARTICLE MEASUREMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) : 296 - +

[10] MAYER JW, 1968, SEMICONDUCTOR DETECT