METALLIC ETCHING OF INDIUM ANTIMONIDE AND GERMANIUM

被引：4

作者：

BARBER, HD

HEASELL, EL

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1967年 / 114卷 / 06期

关键词：

D O I：

10.1149/1.2426672

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：635 / &

共 25 条

[1] POLARITY EFFECTS IN INSB ALLOYED P-N JUNCTIONS [J].

BARBER, HD ;

HEASELL, EL .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) :176-&

[2] POLARITY EFFECTS IN 3-V SEMICONDUCTING COMPOUNDS [J].

BARBER, HD ;

HEASELL, EL .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (10) :1561-&

[3] A TECHNIQUE FOR MAKING ALLOY P-N JUNCTIONS IN INSB [J].

BARBER, HD ;

HEASELL, EL .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :113-&

[4]

BARBER HD, 1965, THESIS U LONDON

[5] HILLOCKS, PITS, AND ETCH RATE IN GERMANIUM CRYSTALS [J].

BATTERMAN, BW .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (11) :1236-1241

[6]

Buckley H.E., 1951, CRYSTAL GROWTH

[7] LIQUID-SOLID INTERFACE SHAPE OBSERVED IN SILICON CRYSTALS GROWN BY THE CZOCHRALSKI METHOD [J].

EDWARDS, WD .

CANADIAN JOURNAL OF PHYSICS, 1960, 38 (03) :439-443

[8] TEMPERATURE GRADIENTS IN SEMICONDUCTOR ALLOYING TECHNOLOGY [J].

EERNISSE, EP ;

THOMPSON, HW .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2652-&

[9]

EERNISSE EP, 1965, THESIS PURDUE U

[10]

EERNISSE EP, PRIVATE COMMUNICATIO

← 1 2 3 →