OPTICAL ABSORPTION IN SEMICONDUCTORS WITH HIGH IMPURITY CONCENTRATIONS IN PRESENCE OF AN ELECTRIC FIELD

被引：26

作者：

LUKES, T

SOMARATN.KT

机构：

来源：

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS | 1970年 / 3卷 / 10期

关键词：

D O I：

10.1088/0022-3719/3/10/006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2044 / &

共 20 条

[1]

BONCHBRUEVICH VL, 1966, ELECTRONIC THEORY HE

[2]

Callaway J., 1964, ENERGY BAND THEORY

[3]

ERDELYI A, 1954, HIGH TRANSCENDENTAL

[4] SPACE-TIME APPROACH TO NON-RELATIVISTIC QUANTUM MECHANICS [J].

FEYNMAN, RP .

REVIEWS OF MODERN PHYSICS, 1948, 20 (02) :367-387

[5]

Greenaway D.L., 1968, OPTICAL PROPERTIES B

[6]

Johnson E. J., 1967, SEMICONDUCTORS SEMIM, V3

[7] A PATH INTEGRAL APPROACH TO DISORDERED SYSTEMS [J].

JONES, R ;

LUKES, T .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1969, 309 (1499) :457-+

[8] INFLUENCE OF IMPURITIES ON OPTICAL ABSORPTION EDGE OF GALLIUM ARSENIDE FROM 297 DEGREES TO 4 DEGREES K [J].

LEFEVRE, J ;

BOIS, D ;

PINARD, P ;

DAVOINE, F ;

LECLERC, P .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1968, 58 (09) :1230-&

[9] EXACT PROPAGATOR FOR AN ELECTRON IN A UNIFORM ELECTRIC FIELD AND ITS APPLICATION TO STARK EFFECT CALCULATIONS [J].

LUKES, T ;

SOMARATNA, KT .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (04) :586-+

[10] ON ELECTRONIC STRUCTURE OF DISORDERED SYSTEMS [J].

LUKES, T .

PHILOSOPHICAL MAGAZINE, 1965, 12 (118) :719-&

← 1 2 →