PHONON-ASSISTED INTERVALENCE BAND ABSORPTION IN SEMICONDUCTOR-LASERS

被引：4

作者：

HAUG, A ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 06期

关键词：

D O I：

10.1088/0268-1242/5/6/016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Intervalence band absorption is discussed as a phenomenon that affects the threshold current of a semiconductor laser. However, calculated values of the absorption coefficient are too small to yield a remarkable effect. The situation is changed if phonon-assisted intervalence band absorption is taken into account. Then the absorption coefficient is considerably enlarged, for instance by more than an order of magnitude in In0.72Ga0.28As 0.6P0.4 with a laser wavelength of 1.3 mu m.

引用

页码：557 / 560

页数：4

共 13 条

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