GALLIUM-ARSENIDE - A NEW MATERIAL TO ACCOMPLISH PASSIVELY MODE-LOCKED ND-YAG LASER

被引：66

作者：

ZHANG, ZH

QIAN, LJ

FAN, DY

DENG, XM

机构：

[1] Shanghai Institute of Optics and Fine Mechanics, Academia Sinica, Shanghai 201800

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 04期

关键词：

D O I：

10.1063/1.106621

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A passively mode-locked Nd:YAG laser using a semi-insulating GaAs is accomplished. Ultrashort pulses, shorter than 10 ps, with an energy of 10-mu-J per pulse are obtained. The dynamics of the pulse formation is described.

引用

页码：419 / 421

页数：3

共 10 条

[1] AGNESI A, 1990, SPIE, V1282, P50
[2] OPTICAL LIMITING IN GAAS
BOGGESS, TF
SMIRL, AL
MOSS, SC
BOYD, IW
VANSTRYLAND, EW
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (05) : 488 - 494
[3] DARK SH, 1988, APPL PHYS LETT, V52, P1201
[4] ACTIVE-PASSIVE MODE-LOCKED ND-YAG LASER WITH PASSIVE NEGATIVE FEEDBACK
DELCORNO, A
GABETTA, G
REALI, GC
KUBECEK, V
MAREK, J
[J]. OPTICS LETTERS, 1990, 15 (13) : 734 - 736
[5] FELDMANN I, 1991, OPT LETT, V16, P241
[6] KNOX WH, 1987, J OPT SOC AM B, V4, P177
[7] ALL SOLID-STATE CW PASSIVELY MODE-LOCKED TI-SAPPHIRE LASER USING A COLORED GLASS FILTER
SARUKURA, N
ISHIDA, Y
YANAGAWA, T
NAKANO, H
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (03) : 229 - 230
[8] PICOSECOND PHOTOREFRACTIVE AND FREE-CARRIER TRANSIENT ENERGY-TRANSFER IN GAAS AT 1-MU-M
SMIRL, AL
VALLEY, GC
BOHNERT, KM
BOGGESS, TF
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (02) : 289 - 303
[9] THEORY OF HIGH-GAIN TRANSIENT ENERGY-TRANSFER IN GAAS AND SI
VALLEY, GC
DUBARD, J
SMIRL, AL
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (06) : 1058 - 1066
[10] ZHANG Z, UNPUB

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