CMOS-COMPATIBLE SILICON DEVICES ON THIN SIO2 MEMBRANES

被引：7

作者：

GAJDA, MA ^{[1
]}

AHMED, H ^{[1
]}

DODGSON, J ^{[1
]}

机构：

[1] CENT RES LABS LTD,HAYES UB3 1HH,MIDDX,ENGLAND

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 01期

关键词：

GAS SENSORS; ELECTRIC SENSING DEVICES; CHEMICAL SENSORS;

D O I：

10.1049/el:19940046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel method of fabricating low power silicon-based devices for use in sensing applications is presented. The devices can be operated at temperatures of similar to 250 degrees C with power consumption not exceeding 25mW.

引用

页码：28 / 30

页数：3

共 6 条

[1] GAJDA MA, IN PRESS SENSORS ACT
[2] IZUMI K, 1978, ELECTRON LETT, V14, P594
[3] ANISOTROPIC ETCHING OF SILICON
LEE, DB
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4569 - &
[4] HYDROGEN SENSITIVE MOS-STRUCTURES .1. PRINCIPLES AND APPLICATIONS
LUNDSTROM, I
[J]. SENSORS AND ACTUATORS, 1981, 1 (04): : 403 - 426
[5] A NEW DETECTOR FOR GASEOUS COMPONENTS USING SEMICONDUCTIVE THIN FILMS
SEIYAMA, T
KATO, A
FUJIISHI, K
NAGATANI, M
[J]. ANALYTICAL CHEMISTRY, 1962, 34 (11) : 1502 - 1503
[6] Wessel S., 1992, Microelectronics Journal, V23, P451, DOI 10.1016/0026-2692(92)90078-F

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