ELECTROMIGRATION IN THIN GOLD FILMS

被引：28

作者：

HARTMAN, TE

BLAIR, JC

机构：

[1] Texas Instruments Inc., Dallas, Tex.

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1969年 / ED16卷 / 04期

关键词：

D O I：

10.1109/T-ED.1969.16766

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electromigration in gold film conductors results in regions of material accumulation and depletion. These regions arise from and are correlated with the thermal gradients along the conductor. This result is in contrast with the observations on aluminum conductors where the effect is dominated by the structure or metallurgical properties of the film. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：407 / &

共 18 条

[1]

Black J.R, 1967, 6 ANN REL PHYS S LOS 6 ANN REL PHYS S LOS

[2]

BLECH I, 1966, 5 ANN S PHYS FAIL EL

[3] DIRECT TRANSMISSION ELECTRON MICROSCOPE OBSERVATION OF ELECTROTRANSPORT IN ALUMINUM THIN FILMS [J].