ZNS/ZNSE/GAAS HETEROSTRUCTURES GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY

被引：11

作者：

HEUKEN, M ^{[1
]}

SOLLNER, J ^{[1
]}

BETTERMANN, W ^{[1
]}

HEIME, K ^{[1
]}

BOLLIG, B ^{[1
]}

KUBALEK, E ^{[1
]}

机构：

[1] UNIV GESAMTHSCH DUISBURG,WERKSTOFFE ELEKTROTECH,W-4100 DUISBURG,GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1991年 / 9卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(91)90170-Z

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work we report the metalorganic vapour phase epitaxial growth and characterization of ZnS/ZnSe multilayer structures on GaAs substrates. High electron mobilities and low background doping concentrations (mu-300 K = 370 cm2 V-1 s-1, n300 K = 7 x 10(14) cm-3), sharp excitonic photoluminescence features and negligible deep centre emissions demonstrate the quality of the layers. However, it is shown that out-diffusion of gallium and arsenic from the substrate, diffusion of sulphur from the ZnS layers and stacking faults deteriorate the heterointerface quality.

引用

页码：189 / 193

页数：5

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