REFRACTIVE-INDEX DATA FROM GAXIN1-XASYP1-Y FILMS

[1] REFRACTIVE-INDEX OF GA1-XALXAS [J]. SOLID STATE COMMUNICATIONS, 1974, 15 (01) : 59 - 63

[2] SIMPLE OPTICAL-ABSORPTION SPECTROMETER SUITABLE FOR MEASUREMENTS AT LOW-TEMPERATURES [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1975, 46 (06) : 677 - 679

[3] BAND-GAP VERSUS COMPOSITION AND DEMONSTRATION OF VEGARDS LAW FOR IN1-XGAXASYP1-Y LATTICE MATCHED TO INP [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 659 - 661

[4] THRESHOLD DEPENDENCE ON ACTIVE-LAYER THICKNESS IN INGAASP-INP DH LASERS [J]. ELECTRONICS LETTERS, 1978, 14 (23) : 727 - 729

[5] STREGE KE, UNPUBLISHED

[6] GAINASP-INP INTEGRATED TWIN-GUIDE LASERS WITH 1ST-ORDER DISTRIBUTED BRAGG REFLECTORS AT 1.3 MU-M WAVELENGTH [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) : L137 - L140

[7] BEHAVIOR OF ELECTRONIC DIELECTRIC CONSTANT IN COVALENT AND IONIC MATERIALS [J]. PHYSICAL REVIEW B, 1971, 3 (04): : 1338 - &

[8] WILLIARDSON RK, 1967, SEMICONDUCTORS SEMIM, V3, P138

[1] REFRACTIVE-INDEX OF GA1-XALXAS [J]. SOLID STATE COMMUNICATIONS, 1974, 15 (01) : 59 - 63

[2] SIMPLE OPTICAL-ABSORPTION SPECTROMETER SUITABLE FOR MEASUREMENTS AT LOW-TEMPERATURES [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1975, 46 (06) : 677 - 679

[3] BAND-GAP VERSUS COMPOSITION AND DEMONSTRATION OF VEGARDS LAW FOR IN1-XGAXASYP1-Y LATTICE MATCHED TO INP [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 659 - 661

[4] THRESHOLD DEPENDENCE ON ACTIVE-LAYER THICKNESS IN INGAASP-INP DH LASERS [J]. ELECTRONICS LETTERS, 1978, 14 (23) : 727 - 729

[5] STREGE KE, UNPUBLISHED

[6] GAINASP-INP INTEGRATED TWIN-GUIDE LASERS WITH 1ST-ORDER DISTRIBUTED BRAGG REFLECTORS AT 1.3 MU-M WAVELENGTH [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) : L137 - L140

[7] BEHAVIOR OF ELECTRONIC DIELECTRIC CONSTANT IN COVALENT AND IONIC MATERIALS [J]. PHYSICAL REVIEW B, 1971, 3 (04): : 1338 - &

[8] WILLIARDSON RK, 1967, SEMICONDUCTORS SEMIM, V3, P138