OHMIC BEHAVIOR OF AU/WSIN/(AU,GE,NI)-NORMAL-GAAS SYSTEMS

被引：12

作者：

MERKEL, U ^{[1
]}

NEBAUER, E ^{[1
]}

MAI, M ^{[1
]}

机构：

[1] ZENT INST ELEKTRONENPHYS,BERLIN,GERMANY

来源：

THIN SOLID FILMS | 1992年 / 217卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90614-H

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Experimental results are presented on the electrical properties of diffusion-barrier-containing ohmic multilayer systems of the type Au/WSiN/(Au,Ge,Ni) on GaAs (n almost-equal-to 2 x 10(17) cm-3) prepared by vapour phase epitaxy. The transmission line method contact resistance R(c) is measured as a function of the layer sequence, composition and reduced total thickness of the internal ohmic (Au,Ge,Ni) system. As for ohmic contacts without diffusion barrier layers, minimum R(c) values in the 0.1 OMEGA mm range are obtained if the gold and germanium layer thicknesses are above about 20 nm. The results are discussed in a secondary phase model and with respect to the low alloying depth being relevant for the contact design of special GaAs devices.

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收藏

页码：108 / 112

页数：5

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