PREPARATION AND CHARACTERIZATION OF REACTIVELY-SPUTTERED AMORPHOUS SI - H FILMS

[1] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[2] INFLUENCE OF PREPARATION CONDITIONS ON FORWARD-BIAS CURRENTS OF AMORPHOUS SILICON SCHOTTKY DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1414 - 1421

[3] FRITZSCHE H, 1977, 7TH P INT C AM LIQ S, P3

[4] KNIGHTS JC, 1978, 10TH P C SOL STAT DE, P101

[5] LEWIS AJ, 1974, P INT C TETRAHEDRALL, P27

[6] LUCOVSKY G, 1978, PHIL MAG B, V37, P467

[7] MATSUDA A, 1979, 8TH P INT C AM LIQ S

[8] PREPARATION OF HIGHLY PHOTOCONDUCTIVE AMORPHOUS SILICON BY RF SPUTTERING [J]. SOLID STATE COMMUNICATIONS, 1977, 23 (03) : 155 - 158

[9] MOUSTAKAS TD, UNPUBLISHED

[10] NAKAGAWA K, 1979, 26TH SPR M JAP SOC A

[1] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[2] INFLUENCE OF PREPARATION CONDITIONS ON FORWARD-BIAS CURRENTS OF AMORPHOUS SILICON SCHOTTKY DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1414 - 1421

[3] FRITZSCHE H, 1977, 7TH P INT C AM LIQ S, P3

[4] KNIGHTS JC, 1978, 10TH P C SOL STAT DE, P101

[5] LEWIS AJ, 1974, P INT C TETRAHEDRALL, P27

[6] LUCOVSKY G, 1978, PHIL MAG B, V37, P467

[7] MATSUDA A, 1979, 8TH P INT C AM LIQ S

[8] PREPARATION OF HIGHLY PHOTOCONDUCTIVE AMORPHOUS SILICON BY RF SPUTTERING [J]. SOLID STATE COMMUNICATIONS, 1977, 23 (03) : 155 - 158

[9] MOUSTAKAS TD, UNPUBLISHED

[10] NAKAGAWA K, 1979, 26TH SPR M JAP SOC A