LASER-INDUCED FLUORESCENCE STUDY OF SILICON ETCHING PROCESS - DETECTION OF SIF2 AND CF2 RADICALS

被引：55

作者：

MATSUMI, Y

TOYODA, S

HAYASHI, T

MIYAMURA, M

YOSHIKAWA, H

KOMIYA, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 12期

关键词：

D O I：

10.1063/1.337489

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4102 / 4108

页数：7

共 32 条

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