CHARGE STATE CONTROLLED SHORT-RANGE AND LONG-RANGE DEFECT MOTIONS IN GAAS

被引:2
作者
KAMADA, H
ANDO, K
机构
[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECTR LABS, ATSUGI, KANAGAWA 24301, JAPAN
[2] NIPPON TELEGRAPH & TEL PUBL CORP, TOKAI, IBARAKI 31911, JAPAN
关键词
D O I
10.1063/1.99594
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1973 / 1975
页数:3
相关论文
共 11 条
[1]   ENHANCED DIFFUSION MECHANISMS [J].
BOURGOIN, JC ;
CORBETT, JW .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (3-4) :157-188
[2]  
GUILLOT G, 1981, I PHYS C SER, V59, P323
[3]  
KIMERLING LC, 1975, I PHYS C SER, V23, P589
[4]   RECOMBINATION-ENHANCED ANNEALING OF E1 AND E2 DEFECT LEVELS IN 1-MEV-ELECTRON-IRRADIATED N-GAAS [J].
LANG, DV ;
KIMERLING, LC ;
LEUNG, SY .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) :3587-3591
[5]   ELECTRON-IRRADIATION EFFECTS IN PARA-TYPE GAAS [J].
LOUALICHE, S ;
NOUAILHAT, A ;
GUILLOT, G ;
GAVAND, M ;
LAUGIER, A ;
BOURGOIN, JC .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8691-8696
[6]   ANISOTROPIC DEFECT INTRODUCTION IN NORMAL-GAAS AND PARA-GAAS BY ELECTRON-IRRADIATION [J].
PONS, D .
PHYSICA B & C, 1983, 116 (1-3) :388-393
[7]  
PONS D, 1980, I PHYS C SER, V59, P269
[8]   IRRADIATION-INDUCED DEFECTS IN PARA-TYPE GAAS [J].
STIEVENARD, D ;
BODDAERT, X ;
BOURGOIN, JC .
PHYSICAL REVIEW B, 1986, 34 (06) :4048-4058
[9]   INTERSTITIAL BORON IN SILICON - A NEGATIVE-U SYSTEM [J].
TROXELL, JR ;
WATKINS, GD .
PHYSICAL REVIEW B, 1980, 22 (02) :921-931
[10]   THEORETICAL TREATMENT OF THE KINETICS OF DIFFUSION-LIMITED REACTIONS [J].
WAITE, TR .
PHYSICAL REVIEW, 1957, 107 (02) :463-470