SILICON-DOPED GALLIUM ARSENIDE GROWN FROM GALLIUM SOLUTION - SILICON SITE DISTRIBUTION

被引：61

作者：

SPITZER, WG

PANISHI, MB

机构：

[1] Materials Science and Electrical Engineering Departments, University of Southern California, Los Angeles

[2] Bell Telephone Laboratories, Inc., Murray Hill

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 10期

关键词：

D O I：

10.1063/1.1657165

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

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页码：4200 / &

相关论文

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[4] KRESSEL H, 1969, 135 M EL SOC NEW YOR
[5] LOCAL MODE ABSORPTION IN COMPENSATED SILICON-DOPED GALLIUM ARSENIDE
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[6] SI-DOPED AND GE-DOPED GAAS P-N JUNCTIONS
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[8] RUPPRECHT H, 1966, APPL PHYS LETT, V9, P6
[9] LOCAL-MODE ABSORPTION AND DEFECTS IN COMPENSATED SILICON-DOPED GALLIUM ARSENIDE
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[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) : 4999 - &
[10] SITE TRANSFER OF SI IN GAAS
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[J]. APPLIED PHYSICS LETTERS, 1968, 12 (01) : 5 - &