MICROLUMINESCENCE DEPTH PROFILES AND ANNEALING EFFECTS IN POROUS SILICON

被引：79

作者：

PROKES, SM

FREITAS, JA

SEARSON, PC

机构：

[1] SACHS FREEMAN ASSOCIATES INC,LANDOVER,MD 20785

[2] JOHNS HOPKINS UNIV,BALTIMORE,MD 21218

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 26期

关键词：

D O I：

10.1063/1.106724

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cross-sectional microluminescence measurements for 1-OMEGA-cm 70-mu-m porous silicon samples show a continuous decrease of the photoluminescence band as a function of sample depth. No spectral shift is observed. For samples annealed at 390-degrees-C, in addition to spectral intensity reduction, we observe the same redshift in all luminescence spectra independent of depth. A study of this luminescence redshift as a function of annealing temperature reveals a striking similarity to results observed for optical band gap shrinking of a-Si:H as a function of hydrogen loss during annealing.

引用

页码：3295 / 3297

页数：3

共 11 条

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[10] EFFICIENT VISIBLE LUMINESCENCE FROM HYDROGENATED AMORPHOUS-SILICON [J].

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SCOTT, BA ;

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BRADLEY, JA .

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