MODELING AND SIMULATION OF ABNORMAL-BEHAVIOR OF THICK-FILM TIN OXIDE GAS SENSORS IN CO

被引:26
作者
SKAFIDAS, PD
VLACHOS, DS
AVARITSIOTIS, JN
机构
[1] NATL TECH UNIV ATHENS,DEPT ELECT ENGN,DIV COMP ENGN,GR-15773 ATHENS,GREECE
[2] NATL TECH UNIV ATHENS,DEPT ELECT ENGN,DIV COMP SCI,MICROELECTR TECHNOL LAB,GR-15773 ATHENS,GREECE
关键词
MODELING; MONTE CARLO SIMULATIONS; TIN OXIDE GAS SENSORS; CARBON MONOXIDE;
D O I
10.1016/0925-4005(94)80012-X
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
A new model is proposed that takes into account oxygen vacancies in tin oxide resistive-type gas sensors, assuming that lattice oxygen modifies the rate of oxygen adsorption. Applying this hypothesis in a Monte Carlo simulation, effects observed in thick-film samples are explained, Moreover, computational techniques have been used in order to simulate different thick-film structures, and the role of both surface coverage and reduction in the sensing mechanism is investigated. The simulation results are in good qualitative agreement with the experimental results obtained from our samples. In particular, phenomena like undershoot and overshoot of the sample's resistance, very long recovery times and poisoning of the sensor surface are discussed.
引用
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页码:109 / 121
页数:13
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