STUDY OF NON-RADIATIVE SILICON DEEXCITATION IN AN OXYGEN ATMOSPHERE USING DIFFERENTIAL MEASUREMENT OF EXCITED-STATE LIFETIMES

被引：1

作者：

AZENCOT, J ^{[1
]}

GOUTTE, R ^{[1
]}

机构：

[1] INST NATL SCI APPL LYON,OPT CORPUSCULAIRE & ULTRASONS LAB,F-69621 VILLEURBANNE,FRANCE

来源：

APPLIED PHYSICS | 1977年 / 14卷 / 03期

关键词：

D O I：

10.1007/BF00882736

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：303 / 311

页数：9

共 20 条

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