PHOTOCRYSTALLIZATION OF AMORPHOUS GEXSE1-X THIN-FILMS

被引：19

作者：

MATSUSHITA, T ^{[1
]}

SUZUKI, A ^{[1
]}

OKUDA, M ^{[1
]}

NANG, TT ^{[1
]}

机构：

[1] UNIV OSAKA PREFECTURE,COLL ENGN,DEPT ELECT ENGN,SAKAI,OSAKA 591,JAPAN

来源：

THIN SOLID FILMS | 1979年 / 58卷 / 02期

关键词：

D O I：

10.1016/0040-6090(79)90283-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The photocrystallization of amorphous GexSe1-x films (0 ≤ x < 0.2) was investigated using electrical conductivity and optical microscopy measurements. For Ge0.05Se0.95 films the crystallization effect is enhanced slightly and the nucleation for crystallization is found to be heterogeneous. For other compositions the crystallization effect is suppressed and nucleation is found to be homogeneous. © 1979.

引用

页码：413 / 417

页数：5