IONICITY TRENDS IN DIAMAGNETISM AND ITS TEMPERATURE-DEPENDENCE IN AVERAGE-VALENCE-4 SEMICONDUCTORS

被引：24

作者：

CANDEA, RM

HUDGENS, SJ

KASTNER, M

机构：

[1] MIT,DEPT PHYS,CAMBRIDGE,MA 02139

[2] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

PHYSICAL REVIEW B | 1978年 / 18卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.18.2733

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2733 / 2738

页数：6

共 10 条

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[9] CHEMICAL-BOND APPROACH TO MAGNETIC-SUSCEPTIBILITY OF TETRAHEDRAL SEMICONDUCTORS [J].

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