SUPERSTRUCTURES OF SUBMONOLAYER INDIUM FILMS ON SILICON(111)7 SURFACES

被引：70

作者：

KAWAJI, M

BABA, S

KINBARA, A

机构：

[1] Department of Applied Physics, University of Tokyo, Bunkyo-ku

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 11期

关键词：

D O I：

10.1063/1.90659

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Superstructures of submonolayer films of indium on a clean silicon (111)7 surface have been investigated using techniques of molecular-beam deposition and reflection high-energy electron diffraction. A two-dimensional phase diagram including four superstructures, 7, (3)1/2, (31)1/2, and 4×1, are presented at substrate temperatures between 300 and 600°C.

引用

页码：748 / 749

页数：2

共 6 条

[1] SYNTHESIS OF STOICHIOMETRIC INSB THIN-FILMS BY A SIMPLE MOLECULAR-BEAM TECHNIQUE
BABA, S
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[2] Heinz T., 1995, LOW ENERGY ELECTRON, V14, P1421
[3] INO S, UNPUBLISHED
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LANDER, JJ
MORRISON, J
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[5] SURFACE REACTIONS OF SILICON WITH ALUMINUM AND WITH INDIUM
LANDER, JJ
MORRISON, J
[J]. SURFACE SCIENCE, 1964, 2 : 553 - 565
[6] ELECTRON-DIFFRACTION STUDY OF STRUCTURE OF SILICON (100)
POPPENDIECK, TD
NGOC, TC
WEBB, MB
[J]. SURFACE SCIENCE, 1978, 75 (02) : 287 - 315

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