学术探索
学术期刊
新闻热点
数据分析
智能评审

INTERACTIONS OF IN ATOMS WITH PARTIAL DISLOCATIONS CORES IN GAAS-0.3-PERCENT IN

被引：12
作者：
BURLEDURBEC, N
PICHAUD, B
MINARI, F
机构：
来源：
PHILOSOPHICAL MAGAZINE LETTERS | 1989年 / 59卷 / 03期
关键词：
D O I：
10.1080/09500838908206333
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：121 / 129
页数：9
相关论文
共 6 条
[1]   DISLOCATION VELOCITY-MEASUREMENTS IN SEMIINSULATING IN-DOPED GAAS [J].
BURLFDURBEC, N ;
PICHAUD, B ;
MINARI, F .
PHILOSOPHICAL MAGAZINE LETTERS, 1987, 56 (05) :173-178
[2]   DISLOCATION VELOCITIES IN GAAS [J].
CHOI, SK ;
MIHARA, M ;
NINOMIYA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (05) :737-745
[3]   DISLOCATION CORES IN SEMICONDUCTORS - FROM THE SHUFFLE OR GLIDE DISPUTE TO THE GLIDE AND SHUFFLE PARTNERSHIP [J].
LOUCHET, F ;
THIBAULTDESSEAUX, J .
REVUE DE PHYSIQUE APPLIQUEE, 1987, 22 (04) :207-219
[4]  
WINTELER HR, 1970, HELV PHYS ACTA, V43, P496
[5]   DYNAMIC CHARACTERISTICS OF DISLOCATIONS IN INDIUM-DOPED GALLIUM-ARSENIDE CRYSTAL [J].
YONENAGA, I ;
SUMINO, K ;
YAMADA, K .
APPLIED PHYSICS LETTERS, 1986, 48 (05) :326-328
[6]   EFFECTS OF IN IMPURITY ON THE DYNAMIC BEHAVIOR OF DISLOCATIONS IN GAAS [J].
YONENAGA, I ;
SUMINO, K .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) :1212-1219
1