LOWEST-ORDER VERTEX CORRECTIONS TO THE ENERGY-GAP IN COVALENT SEMICONDUCTORS

被引：9

作者：

DALING, R ^{[1
]}

UNGER, P ^{[1
]}

FULDE, P ^{[1
]}

VANHAERINGEN, W ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH, W-7000 STUTTGART 80, GERMANY

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.43.1851

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The accuracy of the GW approximation is investigated by evaluating the lowest-order vertex contributions to the energy gap of covalent semiconductors. We compare for silicon the energy shifts of a plane-wave calculation with the results of a variational ansatz in local space. The gap corrections at the GAMMA point are found to be less than 0.1 eV. An analysis of the different diagrammatic contributions shows that there are two counteracting physical processes which lead to partial cancellations.

引用

页码：1851 / 1854

页数：4

共 6 条

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