RECRYSTALLIZATION OF SILICON AMORPHIZED BY CARBON IMPLANTATION

被引：13

作者：

CHEVACHAROENKUL, S ^{[1
]}

ILZHOEFER, JR ^{[1
]}

FEIJOO, D ^{[1
]}

GOSELE, U ^{[1
]}

机构：

[1] DUKE UNIV,DEPT MECH ENGN & MAT SCI,DURHAM,NC 27710

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 13期

关键词：

D O I：

10.1063/1.105190

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Implanting (100) silicon substrates with 35 keV carbon ions at a dose of 1.5 x 10(16) cm-2 causes Si to amorphize from the surface to a depth of 133 +/- 3 nm. Upon annealing at 800-degrees-C the amorphized material recrystallizes to polycrystalline and highly defective single-crystal layers. An in situ annealing study of a cross-sectional transmission electron microscope specimen reveals that the minimum temperature needed to recrystallize the amorphous material is 725 +/- 25-degrees-C. At this temperature grains that grow from the substrate surface dominate the recrystallization process leading to the formation of polycrystalline layer.

引用

页码：1434 / 1436

页数：3

共 6 条

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